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MRF6V14300HSR3 - RF Power Field Effect Transistors

Download the MRF6V14300HSR3 datasheet PDF. This datasheet also covers the MRF6V14300HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Document Number: MRF6V14300H Rev. 3, 4/2010 MRF6V14300HR3 MRF6V14300HSR3 1400 MHz, 330 W, 50 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V14300HR3-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6V14300HSR3 RF Power Field Effect Transistors Motorola
MRF6V14300HR3 RF Power Field Effect Transistors Motorola
MRF6V10250HSR3 RF Power Field Effect Transistor Freescale Semiconductor
MRF6V12500HR3 RF Power Field Effect Transistors Freescale Semiconductor
MRF6V12500HSR3 RF Power Field Effect Transistors Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6V14300HR3 RF Power Field Effect Transistors
MRF6V12500GS RF Power LDMOS Transistors
MRF6V12500H RF Power LDMOS Transistors
MRF6V12500HS RF Power LDMOS Transistors
MRF6V2010GN RF Power FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 μsec, Duty Cycle = 12% Power Gain — 18 dB Drain Efficiency — 60.