MRF6V14300HSR3 Description
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications. Typical Pulsed Performance:.
MRF6V14300HSR3 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- 0.5, +100
- 6.0, +10
- 65 to +150