MRF6VP11KGSR5 Overview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulse Performance at 130 MHz:.
MRF6VP11KGSR5 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- CW Operation Capability with Adequate Cooling
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Designed for Push--Pull Operation
- Greater Negative Gate--Source Voltage Range for Improved Class C
- In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel
- 0.5, +110
- 6.0, +10
- 65 to +150