MRF6VP11KGSR5 Datasheet PDF (RF Power FET) | Download NXP MRF6VP11KGSR5

MRF6VP11KGSR5 - RF Power FET

This page provides the datasheet information for the MRF6VP11KGSR5, a member of the MRF6VP11KHR6 RF Power FET family.

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
CW Operation Capability with Adequate Cooling.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Designed for Push--Pull Operation.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel. Doc.

Datasheet Details

Part number	MRF6VP11KGSR5
Manufacturer	NXP
File Size	853.45 KB
Description	RF Power FET
Datasheet	MRF6VP11KGSR5 Datasheet
Additional preview pages of the MRF6VP11KGSR5 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for pulse wideband applications with frequencies up to 150 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.

Published: Jul 10, 2020 |