MW7IC2020NT1
MW7IC2020NT1 is Power Amplifier manufactured by NXP Semiconductors.
Freescale Semiconductor Technical Data
Document Number: MW7IC2020N Rev. 1, 12/2013
RF LDMOS Wideband Integrated Power Amplifier
The MW7IC2020N wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 2170 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
Driver Application
- 2100 MHz
- Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1 =
40 m A, IDQ2 = 230 m A, Pout = 2.4 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 d B @ 0.01% Probability on CCDF.
1805--2170 MHz, 2.4 W AVG., 28 V SINGLE W--CDMA
RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER
Frequency
Gps (d B)
PAE (%)
Output PAR (d B)
ACPR (d Bc)
2110 MHz 2140 MHz 2170 MHz
32.6 32.6 32.4
16.8 17.0 17.0
7.7 --51.3 7.6 --51.4 7.5 --51.6
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, Pout = 33 Watts CW (3 d B Input Overdrive from Rated Pout)
- Typical Pout @ 1 d B pression Point ≃ 20 Watts CW Driver Application
- 1800 MHz
- CTIDyl Qipp1ipc=ianlg4S,0i Cnmgh Alae,n--In CDe Qal r2Bri=aenr2d W3w0--idm Cth DAM,=PA3o.u P8t4e=r Mf2o H.r4mz W,a Innacptteus:t AVSv Digg D.n,=a IQl2P8MAVRaogl=tnsi7,tu.5ded B
@ 0.01% Probability on CCDF.
PQFN 8 8 PLASTIC
Frequency
Gps (d B)
PAE (%)
Output PAR (d B)
ACPR (d...
