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MW7IC2725NBR1 Datasheet Power Amplifier

Manufacturer: NXP Semiconductors

Overview: Freescale Semiconductor Technical Data Document Number: MW7IC2725N Rev. 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain — 28.5 dB ąPower Added Efficiency — 17% ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ąACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth Driver Applications • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ąPower Gain — 27.8 dB ąPower Added Efficiency — 3.2% ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF ąACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
  • On-Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Re.

MW7IC2725NBR1 Distributor