NXP Semiconductors NX3008CBKV
MOSFET
| Part No. | NX3008CBKV |
|---|---|
| Datasheet | NX3008CBKV Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low threshold voltage● Very fast switching
● Trench MOSFET technology
● ESD protection up to 2 kV
● AEC-Q101 qualified 1.3
APPLICATIONS
● Level shifter● Power supply converter
● Load switch
● Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain current drain-source on-state resistance drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C [1] Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C Tj = 25 °C [1] Min -8 -8 - Typ 1 Max -30 8 -220 30 8 400 1.4 Unit V V mA V V mA Ω TR2 (P-channel) TR1 (N-channel) TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon 2.8 4.1 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. NXP Semiconductors NX3008CBKV 30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET 2.
