NXP Semiconductors NX3020NAKT
MOSFET
| Part No. | NX3020NAKT |
|---|---|
| Datasheet | NX3020NAKT Download |
| Manufacturer |  NXP Semiconductors |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
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● Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3.
APPLICATIONS
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● Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 30 20 180 Unit V V mA Static characteristics drain-source on-state resistance [1] - 2.7 4.5 Ω Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2 Scan or click this QR code to view the latest information for this product NXP Semiconductors NX3020NAKT 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol
DESCRIPTION
G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SC-75 (SOT416) S 017aaa255 6. Ordering information Table 3. Ordering information Package Name NX3020NAKT SC-75DESCRIPTION
plastic surface-mounted package; 3 leads Version SOT416 Type number 7.
