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NX7002BKM - N-channel Trench MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • ElectroStatic Discharge (ESD) protection > 2kV HBM 3.

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Datasheet Details

Part number NX7002BKM
Manufacturer NXP
File Size 233.44 KB
Description N-channel Trench MOSFET
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SOT883 NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2kV HBM 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.
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