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OM3115P Datasheet Hybrid Integrated Circuits For Inductive Proximity Detectors

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET OM3105P Hybrid integrated circuits for inductive proximity detectors Preliminary specification File under Discrete Semiconductors, SC17 January 1994 Philips Semiconductors Philips.

General Description

OM3105P The OM3105P is a hybrid integrated circuit intended for inductive proximity detectors in a tubular construction, especially the M5 hollow stud.

The circuit performs a make function (version 1): when actuated, the current flows through the load, which can be for example a LED or an optocoupler.

It is also possible to perform a break function when using version OM3115P.

Key Features

  • Extra small dimensions (3 x 20 mm max. ).
  • Wide supply voltage range (6 to 35 V).
  • Supply current typical 1.5 mA (output stage switched off).
  • High output current (250 mA max. ).
  • RC filter on the supply lines.
  • PNP output transistor protected against transients from the inductive load.
  • Circuit protected against wrong polarity connection of the supply voltage.
  • Electronic short-circuit protection.
  • Detection distance adjust.

More Datasheets from NXP Semiconductors

Part Number Description
OM3115N Hybrid integrated circuits for inductive proximity detectors
OM3105N Hybrid integrated circuits for inductive proximity detectors
OM3105P Hybrid integrated circuits for inductive proximity detectors
OM361 Hybrid Integrated Circuit VHF/UHF Wide-Band Amplifier
OM370 Hybrid Integrated Circuit VHF/UHF Wide-Band Amplifier

OM3115P Distributor