NXP Semiconductors ON5088
This device is sensitive to ElectroStatic Discharge (ESD).| Part No. | ON5088 |
|---|---|
| Datasheet | ON5088 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN wideband silicon germanium RF transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Low noise high gain microwave transistor● High maximum stable gain 27 dB at 1.8 GHz
● 110 GHz fT silicon germanium technology 1.3
APPLICATIONS
● 2nd and 3rd LNA stage in DBS LNBs● Satellite radio
● Low noise amplifiers for microwave communications systems
● WLAN and WiMAX applications
● Analog/digital cordless applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCB collector-base voltage VCE collector-emitter voltage VEB IC Ptot hFE CCBS emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance Conditions open emitter open base shorted base open collector Tsp 90 C IC = 10 mA; VCE = 2 V; Tj = 25 C VCB = 2 V; f = 1 MHz Min Typ -- -- -- -- - 25 [1] - - 160 280 Max 10 3.0 10 1.0 40 136 400 Unit V V V V mA mW - 70 - fF NXP Semiconductors ON5088 NPN wideband silicon germanium RF transistor Table 1. Quick reference data …continued Symbol Parameter Conditions fT transition frequency G...
