ON5088
description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
- Low noise high gain microwave transistor
- High maximum stable gain 27 d B at 1.8 GHz
- 110 GHz f T silicon germanium technology
1.3 Applications
- 2nd and 3rd LNA stage in DBS LNBs
- Satellite radio
- Low noise amplifiers for microwave munications systems
- WLAN and Wi MAX applications
- Analog/digital cordless applications
1.4 Quick reference data
Table 1. Quick reference data Symbol Parameter VCB collector-base voltage VCE collector-emitter voltage
VEB IC Ptot h FE
CCBS emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance
Conditions...
