Datasheet Summary
SOT223
600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor
24 June 2015
Product data sheet
1. General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP plement: PBHV3160Z
2. Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability
- High collector current gain hFE at high IC
3. Applications
- Electronic ballast for fluorecent lighting
- LED driver for LED chain module
- LCD backlighting
- HID front lighting
- Hook switch for wired tele
- Switch Mode Power Supply (SMPS)
4. Quick reference...
