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PBHV2160Z Datasheet NPN High-voltage Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1.

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV3160Z 2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability.
  • High collector current gain hFE at high IC 3.

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