NXP Semiconductors PBHV2160Z
NPN high-voltage low VCEsat (BISS) transistor
FEATURES AND BENEFITS
● Low collector-emitter saturation voltage VCEsat● High collector current capability
● High collector current gain hFE at high IC 3.
APPLICATIONS
● Electronic ballast for fluorecent lighting● LED driver for LED chain module
● LCD backlighting
● HID front lighting
● Hook switch for wired telecom
● Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Symbol VCEO IC Quick reference data Parameter collector-emitter voltage collector current Conditions open base Min Typ Max Unit - - 600 V - - 0.1 A Scan or click this QR code to view the latest information for this product NXP Semiconductors PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol 2, 4 1 3 sym016 6. Ordering information Table 3. Ordering information Type number Package Name PBHV2160Z SC-73DESCRIPTION
plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7.