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PBHV2160Z - NPN high-voltage low VCEsat (BISS) transistor

General Description

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability.
  • High collector current gain hFE at high IC 3.

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SOT223 PBHV2160Z 600 V, 0.1 A NPN high-voltage low VCEsat (BISS) transistor 24 June 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV3160Z 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC 3. Applications • Electronic ballast for fluorecent lighting • LED driver for LED chain module • LCD backlighting • HID front lighting • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1.