PBSS302ND Datasheet | NXP Semiconductors

description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP plement: PBSS302PD. 1.2 Features s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans) Thin Film Transistor (TFT) backlight inverter 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat [1] [2] Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance t = 1 ms or limited by Tj(max) IC = 6 A; IB = 600 m A [2] Conditions open base [1] Min - Typ 55 Max 40 4 15 75 Unit V A A mΩ Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors 40 V NPN low VCEsat (BISS) transistor .. 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description collector collector base emitter collector collector 1 2 3 6 5 4 3 4 sym014 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ordering information Package Name PBSS302ND SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code C7 Type number PBSS302ND 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation tp ≤ 300 µs Tamb ≤ 25 °C [2] [3] [4] [1] [2] [5] Conditions open emitter open base open collector [1] Min - Max 60 40...