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PBSS302NZ - 5.8A NPN transistor

General Description

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • AEC-Q101 qualified 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS302NZ 20 V, 5.8 A NPN low VCEsat transistor 12 January 2023 Product data sheet 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • AEC-Q101 qualified 3. Applications • DC-to-DC conversion • MOSFET gate driving • Motor control • Charging circuits • Power switches (e.g. motors, fans) 4. Quick reference data Table 1.