Datasheet Summary
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40 V PNP low VCEsat (BISS) transistor
Rev. 01
- 18 April 2005 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN plement: PBSS302ND
1.2 Features s s s s s Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation
1.3 Applications s s s s s s Power management functions Charging circuits DC-to-DC conversion MOSFET gate driving Power switches (e.g. motors, fans)...
