PBSS3515M Description
Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resist.
PBSS3515M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements