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PBSS3515M - PNP Transistor

Description

Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package.

NPN complement: PBSS2515M.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board requirements.

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Datasheet Details

Part number PBSS3515M
Manufacturer NXP
File Size 77.78 KB
Description PNP Transistor
Datasheet download datasheet PBSS3515M Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet PBSS3515M FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting. • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION Low VCEsat PNP transistor in a SOT883 leadless ultra small plastic package.
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