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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS3515VS 15 V low VCEsat PNP double transistor
Product specification Supersedes data of 2001 Sep 27 2001 Nov 07
Philips Semiconductors
Product specification
15 V low VCEsat PNP double transistor
FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs.
PBSS3515VS Datasheet
