PBSS3515VS Description
TR2 PARAMETER collector-emitter voltage peak collector current equivalent on-resistance MAX. −15 −1 <500 UNIT V A mΩ 6 5 4 TR2 TR1 DESCRIPTION PNP low VCEsat double transistor in a SOT666 plastic package. MARKING TYPE NUMBER PBSS3515VS MARKING CODE 35 Fig.1 Simplified outline (SOT666) and symbol.
PBSS3515VS Key Features
- 300 mW total power dissipation
- Very small 1.6 x 1.2 mm ultra thin package
- Self alignment during soldering due to straight leads
- Low collector-emitter saturation voltage
- High current capability
- Improved thermal behaviour due to flat leads
- Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs