Datasheet Summary
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20 V, 2 A NPN low VCEsat (BISS) transistor
Rev. 01
- 6 February 2006 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP plement: PBSS5220V.
1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications s s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging...
