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PBSS4230T - NPN low VCEsat (BISS) transistor

General Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.

PNP complement: PBSS5230T.

MARKING TYPE NUMBER PBSS4230T Note 1.

= p: made in Hong Kong.

= t: made in Malaysia.

= W: made in China.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to MOSFETs in specific.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 30 V, 2 A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS • Power management – DC/DC conversion – Supply line switching – Battery charger – LCD backlighting. • Peripheral driver – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load drivers (e.g. relays, buzzers and motors).