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PBSS4230T Datasheet NPN Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product specification 2003 Sep 29 Philips Semiconductors Product specification 30 V, 2 A NPN low VCEsat (BISS).

General Description

NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters.

PNP plement: PBSS5230T.

MARKING TYPE NUMBER PBSS4230T Note 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to MOSFETs in specific.

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