Part PBSS4230T
Description NPN low VCEsat (BISS) transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 47.87 KB
NXP Semiconductors
PBSS4230T

Overview

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High efficiency leading to less heat generation
  • Reduced printed-circuit board requirements
  • Cost effective alternative to MOSFETs in specific applications. APPLICATIONS
  • Power management - DC/DC conversion - Supply line switching - Battery charger - LCD backlighting.
  • Peripheral driver - Driver in low supply voltage applications (e.g. lamps and LEDs) - Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION NPN BISS transistor in a SOT23 plastic package providing ultra low VCEsat and RCEsat parameters. PNP complement: PBSS5230T. MARKING TYPE NUMBER PBSS4230T Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4230T - DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *3D 1 Top view