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PBSS4250X - NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat transistor in a SOT89 plastic package.

PNP complement: PBSS5250X.

MARKING TYPE NUMBER PBSS5250X Note 1.

= p: Made in Hong Kong = t: Made in Malaysia

= W: Made in China.

1M

Key Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4250X 50 V, 2 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jun 17 2004 Nov 08 Philips Semiconductors Product specification 50 V, 2 A NPN low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors).