PBSS4250X Datasheet | NXP Semiconductors

FEATURES - SOT89 (SC-62) package - Low collector-emitter saturation voltage VCEsat - High collector current capability: IC and ICM - Higher efficiency leading to less heat generation - Reduced printed-circuit board requirements. APPLICATIONS - Power management - DC/DC converters - Supply line switching - Battery charger - LCD backlighting. - Peripheral drivers - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package. PNP plement: PBSS5250X. MARKING TYPE NUMBER PBSS5250X Note 1. - = p: Made in Hong Kong - = t: Made in Malaysia - = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4250X SC-62 DESCRIPTION MARKING CODE(1) - 1M QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER MAX. 50 2 5 160 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. VERSION SOT89 plastic surface mounted package; collector pad for good heat transfer; 3 leads 2004 Nov 08 Philips Semiconductors Product specification 50 V, 2 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature - - - 65 - - 65 limited by Tj(max) CONDITIONS open emitter open base open collector - - - -...