Datasheet4U Logo Datasheet4U.com

PBSS4320T - NPN transistor

General Description

NPN low VCEsat transistor in a SOT23 plastic package.

PNP complement: PBSS5320T.

1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
  • High collector current capability.
  • High collector current gain.
  • Improved efficiency due to reduced heat generation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS4320T Silicon NPN transistor BLUE ROCKET ELECTRONICS
PBSS4320X NPN transistor nexperia
PBSS4330PA 3A NPN transistor nexperia
PBSS4330PAS NPN transistor nexperia
PBSS4350SPN NPN/PNP transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS4320X 20 V / 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA 3 A NPN low VCEsat (BISS) transistor
PBSS4330PAS 3A NPN low VCEsat (BISS) transistor
PBSS4330X transistor
PBSS4350D NPN transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4320T 20 V NPN low VCEsat transistor Product data sheet Supersedes data of 2002 Aug 08 2004 Mar 18 NXP Semiconductors 20 V NPN low VCEsat transistor Product data sheet PBSS4320T FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5320T. MARKING TYPE NUMBER PBSS4320T MARKING CODE(1) ZG* Note 1.