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PBSS4330X - transistor

General Description

NPN low VCEsat transistor in a SOT89 plastic package.

1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

Key Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements. QUICK.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Nov 28 2004 Dec 06 NXP Semiconductors 30 V, 3 A NPN low VCEsat (BISS) transistor Product data sheet PBSS4330X FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO IC ICM RCEsat collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.