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PBSS4480X - 80 V/ 4 A NPN low VCEsat (BISS) transistor

Description

NPN low VCEsat transistor in a SOT89 (SC-62) plastic package.

PNP complement: PBSS5480X.

MAX.

Features

  • High hFE and low VCEsat at high current operation.
  • High collector current capability: IC maximum 4 A.
  • High efficiency leading to less heat generation.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 PBSS4480X 80 V, 4 A NPN low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Aug 5 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g. fan, motor • Strobe flash units for DSC and mobile phones • Inverter applications; e.g. TFT displays • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP complement: PBSS5480X.
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