PBSS4560PA
PBSS4560PA is 6A NPN Transistor manufactured by NXP Semiconductors.
description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PNP plement: PBSS5560PA.
1.2 Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
1.3 Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM
Quick reference data Parameter collector-emitter voltage collector current peak collector current
RCEsat collector-emitter saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions open base single pulse; tp ≤ 1 ms IC = 6 A; IB = 300 m A
Min Typ Max Unit
- -
- -
- -
[1]
- 34
48 mΩ
NXP Semiconductors
60 V, 6 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline
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