PBSS4580PA Datasheet | NXP Semiconductors

description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP plement: PBSS5580PA. 1.2 Features and benefits - - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications - - - - - Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat [1] Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 5.6 A; IB = 280 m A [1] Conditions open base Min - Typ 40 Max 80 5.6 7 57 Unit V A A mΩ Pulse test: tp ≤ 300 μs; δ ≤ 0.02. w w w . D a t a S h e e t 4 U . c NXP Semiconductors 80 V, 5.6 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 3 1 2 1 2 sym021 Simplified outline Graphic symbol Transparent top view 3. Ordering information Table 3. Ordering information Package Name PBSS4580PA Description Version HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm Type number 4. Marking Table 4. Marking codes Marking code AD Type number PBSS4580PA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current total power dissipation Tamb ≤ 25 °C [1] [2] [3] [4] Conditions...