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PBSS5220T Datasheet PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat.

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

−20 −2 −3 113 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.

MARKING TYPE NUMBER PBSS5230T Note 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.
  • Cost effective alternative to MOSFETs in specific.

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