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PBSS5250X - PNP Transistor

General Description

NPN low VCEsat transistor in a SOT89 plastic package.

NPN complement: PBSS4250X.

MARKING TYPE NUMBER PBSS5250X Note 1.

= p : made in Hong Kong = t : made in Malaysia

= W : made in China.

1L MARKING CODE(1) 1 Bottom view 2 3 handbook, halfpage PBSS5250X QUICK REFERENCE DATA SY

Key Features

  • SOT89 (SC-62) package.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability: IC and ICM.
  • Higher efficiency leading to less heat generation.
  • Reduced printed-circuit board requirements.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5250X 50 V, 2 A PNP low VCEsat (BISS) transistor Objective specification 2003 Jun 17 Philips Semiconductors Objective specification 50 V, 2 A PNP low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION NPN low VCEsat transistor in a SOT89 plastic package.