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PBSS5320D - PNP transistor

General Description

PNP low VCEsat transistor in a SOT457 (SC-74) plastic package.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved device reliability due to reduced heat generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS5320D 20 V low VCEsat PNP transistor Product specification 2002 Jun 12 Philips Semiconductors Product specification 20 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT457 (SC-74) plastic package.