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PBSS5480X - PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat (BISS) transistor in a SOT89 (SC-62) plastic package.

NPN complement: PBSS4480X.

MARKING TYPE NUMBER PBSS5480X Note 1.

= p: made in Hong Kong.

= t: made in Malaysia.

= W: made in China.

1Z 3 2 1 PBSS5480X QUICK REFERENCE DATA SYMBOL VCEO IC ICM

Key Features

  • High hFE and low VCEsat at high current operation.
  • High collector current IC: 4 A.
  • High efficiency leading to less heat generation.

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Full PDF Text Transcription for PBSS5480X (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS5480X. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of ...

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low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jun 8 2004 Nov 08 Philips Semiconductors Product specification 80 V, 4 A PNP low VCEsat (BISS) transistor FEATURES • High hFE and low VCEsat at high current operation • High collector current IC: 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers (e.g. fans and motors) • Strobe flash units for digital still cameras and mobile phones • Inverter applications (e.g. TFT displays) • Power switch for LAN and ADSL systems • Medium power DC-to-DC conversion • Battery chargers. DESCRIPTION PNP low VCEsat (BIS

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