PBSS5580PA Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
PBSS5580PA Key Features
- Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Ci