PBSS8510PA Datasheet | NXP Semiconductors

.. 100 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 1 - 17 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP plement: PBSS9410PA. 1.2 Features and benefits - - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package...