PBSS9410PA Datasheet | NXP Semiconductors

.. 100 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 - 11 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN plement: PBSS8510PA. 1.2 Features and benefits - - - - - Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package...