PBYL2525CTB Datasheet | NXP Semiconductors

FEATURES - Low forward volt drop - Fast switching - Reverse surge capability - High thermal cycling performance - Low thermal resistance PBYL2525CT, PBYL2525CTB series SYMBOL QUICK REFERENCE DATA VR = 20 V/ 25 V IO(AV) = 25 A VF ≤ 0.43 V a1 1 k 2 a2 3 GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL2525CTB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain 1 source DESCRIPTION SOT78 (TO220AB) tab SOT404 tab 2 drain 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYL25 PBYL25 VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature Tmb ≤ 120 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C square wave; δ = 0.5; Tmb ≤ 119 ˚C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 ˚C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 20CT 20CTB 20 20 20 25 25 135 150 1 150 175 25CT 25CTB 25 25 25 UNIT V V V A A A A A ˚C ˚C IRRM Tj Tstg 1. It is not possible to make connection to pin 2 of the SOT404 package. March 1998 Rev 1.000 Philips Semiconductors Product specification Rectifier diodes Schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS PBYL2525CT, PBYL2525CTB series MIN. - TYP. MAX. UNIT 60 50 3 2 K/W K/W K/W K/W per diode both diodes SOT78 package, in free air SOT404 package, pcb...