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PDTA123ET - PNP resistor-equipped transistor

General Description

PNP resistor-equipped transistor in a SOT23 plastic package.

NPN complement: PDTC123ET.

PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1.

Key Features

  • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification Supersedes data of 1998 May 18 1999 May 21 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING PIN 1 2 3 MARKING TYPE NUMBER PDTA123ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.