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PDTA123JT - PNP resistor-equipped transistor

General Description

PNP resistor-equipped transistor in a SOT23 plastic package.

NPN complement: PDTC123ET.

Fig.1 Simplified outline (SOT23) and symbol.

Key Features

  • Built-in bias resistors (typ 2.2 kΩ and 47 kΩ respectively).
  • Simplification of circuit design.
  • Reduces number of components and board space.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors (typ 2.2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 PDTA123JT handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.