PDTA124ET
FEATURES
- Built-in bias resistors R1 and R2 (typ. 22 kΩ each)
- Simplification of circuit design
- Reduces number of ponents and board space. APPLICATIONS
- Especially suitable for space reduction in interface and driver circuits
- Inverter circuit configurations without use of external resistors. DESCRIPTION
PNP resistor-equipped transistor in a SOT23 plastic package. NPN plement: PDTC124ET. PINNING
MGA893
- 1
PDTA124ET handbook, 4 columns
3 3 R1 1 R2 2 1 2
MAM100
Top view
Fig.1 Simplified outline (SOT23) and symbol.
MARKING TYPE NUMBER
1 2 3
MARKING CODE(1) ∗05
PDTA124ET Note
PIN 1 2 3
DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Equivalent inverter symbol.
1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia.
1999 Apr 13
Philips Semiconductors
Product specification
PNP resistor-equipped transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage...
