PDTA143XT Datasheet | NXP Semiconductors

FEATURES - Built-in bias resistors R1 and R2 (typ.4.7 kΩ and 10 kΩ respectively) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. 1 3 2 handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTA143XT MARKING CODE(1) ∗31 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SOT23 standard mounting conditions. output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 - - - - - - 65 - - 65 7 - 20 - 100 - 100 250 +150 150 +150 V V m A m A m W °C °C °C CONDITIONS open emitter open base open collector - - - MIN. MAX. - 50 - 50 - 10 V V V UNIT 1999 Apr 20 Philips Semiconductors Product specification PNP resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = - 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = - 50 V IB = 0; VCE...