PDTA143ZS
Description
base collector emitter 1 2 3 3 PDTA143ZE PDTA143ZEF PDTA143ZK PDTA143ZT PDTA143ZU 1 Top view 2 MDB271 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTA143ZM handbook, halfpage 1 2 3 R1 3 1 Bottom view MDB267 base emitter collector 3 2 1 R2 2 2004 Aug 05 3 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
Key Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of ponent count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
