• Part: PDTA143ZU
  • Description: PNP resistor-equipped transistors R1 = 4.7 kW/ R2 = 47 kW
  • Category: Transistor
  • Manufacturer: NXP Semiconductors
  • Size: 92.91 KB
Download PDTA143ZU Datasheet PDF
NXP Semiconductors
PDTA143ZU
PDTA143ZU is PNP resistor-equipped transistors R1 = 4.7 kW/ R2 = 47 kW manufactured by NXP Semiconductors.
FEATURES - Built-in bias resistors - Simplified circuit design - Reduction of ponent count - Reduced pick and place costs. APPLICATIONS - General purpose switching and amplification - Inverter and interface circuits - Circuit driver. DESCRIPTION PDTA143Z series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. - - 4.7 47 MAX. - 50 - 100 - - UNIT V m A kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA143ZE PDTA143ZEF PDTA143ZK PDTA143ZM PDTA143ZS PDTA143ZT PDTA143ZU Note 1. - = p: Made in Hong Kong. - = t: Made in Malaysia. - = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 - SC-70 37 52 19 DP TA143Z - 19(1) - 47(1) PDTC143ZE PDTC143ZEF PDTC143ZK PDTC143ZM PDTC143ZS PDTC143ZT PDTC143ZU MARKING CODE NPN PLEMENT 2004 Aug 05 Philips Semiconductors Product specification PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING PDTA143Z series PINNING TYPE NUMBER PDTA143ZS handbook, halfpage SIMPLIFIED OUTLINE AND SYMBOL PIN 1 2 2 R1 1 R2 3 MAM338 DESCRIPTION base collector emitter 1 2 3 PDTA143ZE PDTA143ZEF PDTA143ZK PDTA143ZT PDTA143ZU 1 Top view...