PDTB123E Datasheet | NXP Semiconductors

description 500 m A PNP Resistor-Equipped Transistors (RET) family. Table 1: Product overview Package Philips PDTB123EK PDTB123ES [1] PDTB123ET [1] Type number NPN plement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTD123EK PDTD123ES PDTD123ET SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features s Built-in bias resistors s Simplifies circuit design s 500 m A output current capability s Reduces ponent count s Reduces pick and place costs s ±10 % resistor ratio tolerance 1.3 Applications s Digital application in automotive and industrial segments s Controlling IC inputs s Cost-saving alternative for BC807 series in digital applications s Switching loads 1.4 Quick reference data Table 2: Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.54 0.9 Typ 2.2 1.0 Max - 50 - 500 2.86 1.1 Unit V m A kΩ Philips Semiconductors PDTB123E series PNP 500 m A resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ .. 2. Pinning information Table 3: Pin SOT54 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab347 006aaa148 Pinning Description Simplified outline Symbol 2 R1 1 R2 3 SOT54A 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab348 006aaa148 2 R1 1 R2 3 SOT54 variant 1 2 3 input (base) output (collector) GND (emitter) 1 2 3 001aab447 006aaa148 2 R1 1 R2 3 SOT23, SOT346 1 2 3 input (base) GND (emitter) output (collector) 1 2 006aaa144 sym003 R1 3...