PDTB123ET
PDTB123ET is 50V resistor-equipped transistor manufactured by NXP Semiconductors.
description
500 m A PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN plement: PDTD123ET.
1.2 Features and benefits
- 500 m A output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces ponent count
- Reduces pick and place costs
- ±10 % resistor ratio tolerance
- AEC-Q101 qualified
1.3 Applications
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC807 series in digital applications
- Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ --1.54 2.2 0.9 1.0
Max
- 50
- 500...
