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PDTB123TT - 50V resistor-equipped transistor

Datasheet Summary

Description

500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTD123TT.

Features

  • 500 mA output current capability.
  • Built-in bias resistor.
  • Simplifies circuit design.
  • Reduces component count.
  • Reduces pick and place costs.
  • AEC-Q101 qualified 1.3.

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Datasheet Details

Part number PDTB123TT
Manufacturer NXP
File Size 94.11 KB
Description 50V resistor-equipped transistor
Datasheet download datasheet PDTB123TT Datasheet
Additional preview pages of the PDTB123TT datasheet.

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Full PDF Text Transcription

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PDTB123TT PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open Rev. 4 — 8 November 2010 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTD123TT. 1.2 Features and benefits „ 500 mA output current capability „ Built-in bias resistor „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs „ AEC-Q101 qualified 1.3 Applications „ Digital application in automotive and industrial segments „ Control of IC inputs „ Cost-saving alternative for BC807 series in digital applications „ Switching loads 1.4 Quick reference data Table 1.
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