PDTB123YT
PDTB123YT is 50V resistor-equipped transistor manufactured by NXP Semiconductors.
description
500 m A PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN plement: PDTD123YT.
1.2 Features and benefits
- 500 m A output current capability
- Built-in bias resistors
- Simplifies circuit design
- Reduces ponent count
- Reduces pick and place costs
- ±10 % resistor ratio tolerance
- AEC-Q101 qualified
1.3 Applications
- Digital application in automotive and industrial segments
- Control of IC inputs
- Cost-saving alternative for BC807 series in digital applications
- Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ Max Unit
- -
- 50 V
- -
- 500 m A 1.54 2.2 2.86 kΩ 4.1 4.55 5
NXP Semiconductors
PNP 500 m A, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description input (base) GND (emitter) output (collector)
Simplified outline
Graphic symbol
006aaa144
R1
R2
2...
