PDTC124ET Datasheet | NXP Semiconductors

FEATURES - Built-in bias resistors R1 and R2 (typ. 22 kΩ each) - Simplification of circuit design - Reduces number of ponents and boardspace. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PNP plement: PDTA124ET. 1 3 2 1 Top view 2 MAM097 PDTC124ET handbook, 4 columns 3 3 R1 1 R2 2 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC124ET Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) ∗17 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output MGA893 - 1 Fig.2 Equivalent inverter symbol. 1999 Apr 16 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 m A; VCE = 5 V IC = 10 m A; IB = 0.5 m A IC = 100 µA; VCE = 5 V IC = 5 m A; VCE = 0.3 V MIN. - - - - 60 - - 2.5 15.4 0.8 - PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 output current (DC) peak collector current total power dissipation...