PDTC143XT Datasheet | NXP Semiconductors

URES - Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 10 kΩ respectively) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. 1 2 MGA893 - 1 PDTC143XT handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM097 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER MARKING CODE(1) ∗32 PDTC143XT Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SOT23 standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 - - - - - - 65 - - 65 20 - 7 100 100 250 +150 150 +150 V V m A m A m W °C °C °C CONDITIONS open emitter open base open collector - - - MIN. MAX. 50 50 10 V V V UNIT Philips Semiconductors Product specification NPN resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOT23 standard mounting conditions. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj =...