PDTC143ZE
Description
base collector emitter 1 2 3 3 PDTC143ZE PDTC143ZEF PDTC143ZK PDTC143ZT PDTC143ZU 1 Top view 2 MDB269 1 2 handbook, halfpage base emitter collector 3 R1 1 R2 3 3 2 PDTC143ZM handbook, halfpage 1 2 3 R1 1 3 1 bottom view MHC506 base emitter collector 3 2 R2 2 2004 Aug 16 3 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ.
Key Features
- Built-in bias resistors
- Simplified circuit design
- Reduction of ponent count
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- 4.7 47 MAX. 50 100
