PDTC144 Datasheet | NXP Semiconductors

URES - Built-in bias resistors R1 and R2 (typ. 47 kΩ each) - Simplification of circuit design - Reduces number of ponents and board space. APPLICATIONS - Especially suitable for space reduction in interface and driver circuits - Inverter circuit configurations without use of external resistors. DESCRIPTION NPN resistor-equipped transistor in an SC-75 plastic package. PNP plement: PDTA144EE. 1 3 2 MGA893 - 1 PDTC144EE handbook, halfpage 3 R1 1 R2 1 Top view MAM346 Fig.1 Simplified outline (SC-75) and symbol. MARKING TYPE NUMBER PDTC144EE MARKING CODE 08 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground collector/output Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot h FE R1 R2 -----R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = 5 m A; VCE = 5 V CONDITIONS open base - - - - 80 33 0.8 MIN. - - - - - 47 1 TYP. MAX. 50 100 100 150 - 61 1.2 kΩ UNIT V m A m A m W 1998 Jul 16 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICEO IEBO h FE VCEsat Vi(off) Vi(on) R1 R2 -----R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 5 m A; VCE...