NXP Semiconductors PDTC144ET
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | PDTC144ET |
|---|---|
| Datasheet | PDTC144ET Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN resistor-equipped transistor |
| Buy | Stock & Price |
FEATURES
● Built-in bias resistors R1 and R2 (typ. 47 kΩ each)● Simplification of circuit design
● Reduces number of components and board space.
APPLICATIONS
● Especially suitable for space reduction in interface and driver circuits● Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA144ET. 1 3 2 MGA893 - 1 PDTC144ET handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM097 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTC144ET MARKING CODE(1) ∗08 PINNING PIN 1 2 3DESCRIPTION
base/input emitter/ground collector/output Fig.2 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Equivalent inverter symbol. 1999 Apr 16 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
