PDTD113ZT
PDTD113ZT is NPN resistor-equipped transistor manufactured by NXP Semiconductors.
description
NPN 500 m A Resistor-Equipped Transistor (RET) in a small Surface-Mounted Device (SMD) plastic package.
PNP plement: PDTB113ZT.
1.2 Features
I Built-in bias resistors I Simplifies circuit design I 500 m A output current capability
I Reduces ponent count I Reduces pick and place costs I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and industrial segments
I Controlling IC inputs
I Cost-saving alternative for BC817 series in digital applications
I Switching loads
1.4 Quick reference data
Table 1. Symbol VCEO IO R1 R2/R1
Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio
Conditions open base
Min Typ Max Unit
- - 50 V
- - 500 m A
0.7 1
1.3 kΩ
9 10 11
NXP Semiconductors
NPN 500 m A resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description input (base) GND (emitter) output (collector)
Simplified outline Graphic symbol
3 12
R1 1
R2
2 sym007
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
- plastic surface-mounted package; 3 leads
4. Marking
Table 4. Marking codes Type number...
