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PEMD10 - NPN/PNP resistor-equipped transistors

General Description

NPN/PNP resistor-equipped transistors in a SOT666 plastic package.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 × 1.2 mm ultra thin package.
  • Excellent coplanarity due to straight leads.
  • Replaces two SC-75/SC-89 packaged transistors on same PCB area.
  • Reduces required PCB area.
  • Reduced pick and place costs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Preliminary specification 2001 Sep 11 Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.6 × 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package.