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PEMD48 - NPN/PNP resistor-equipped transistors

General Description

NPN/PNP resistor-equipped transistors in a SOT666 plastic package.

QUICK REFERENCE DATA SYMBOL VCEO ICM R1 R2 PARAMETER collector-emitter voltage peak collector current MAX.

Key Features

  • 300 mW total power dissipation.
  • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package.
  • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors.
  • Reduces required board space.
  • Reduces pick and place costs.
  • Self alignment during soldering due to straight leads.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD48 NPN/PNP resistor-equipped transistors; R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ Product specification Supersedes data of 2001 Sep 24 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1, R2 = 47 kΩ, 47 kΩ and 2.2 kΩ, 47 kΩ FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Reduces number of components as replacement of two SC-75/SC-89 packaged transistors • Reduces required board space • Reduces pick and place costs • Self alignment during soldering due to straight leads. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver.