Datasheet Summary
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMH11 NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Preliminary specification 2001 Oct 22
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
Features
- 300 mW total power dissipation
- Very small 1.6 × 1.2 mm ultra thin package
- Self alignment during soldering due to straight leads
- Replaces two SC-75/SC-89 packaged transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and amplification
- Inverter and interface circuits
- Circuit driver. DESCRIPTION NPN resistor-equipped transistors in a SOT666...